INSTRUMENT | REMARKS | LOCATION |
---|---|---|
Probe station | Four probes, CCD camera and LHe flow cryostat | Characterization-1 |
Computer controlled transport station (1) | Multichannel DAC/ADC interface, current amplifier, phase lock amplifier | Characterization-1 |
Semiconductor Parameter Analyzer | Interfaces with Dell laptop for electrical characterization of devices | Characterization-1 |
Probe station | Five probes, microscope, CCD camera and LHe flow cryostat | Characterization-1 |
Computer controlled transport station (2) | Multichannel DAC/ACD interface, current amplifier, DC source, multiplexer for study of up to 14 independent inputs simultaneously | Characterization-1 |
MultiMode Scanning Probe Microscope (SPM) | Nanoscope 1 controller; equipped for SGM, EFM and related measurements | Characterization-1 |
AFM | Inverted lens for study of nanostructures and biological systems | Characterization-1 |
UHV-LT STM | Liquid helium temperature, ultrahigh vacuum scanning tunneling microscope equipped with in-house designed electronics and control software | Characterization-2 |
Optical Microscope | Bright Field, Dark Field and UV modes; 5x, 20x, 50x and 100x objectives; CCD camera attached to computer for capturing still images and movies | Characterization-1 |
Optical Microscope | Bright Field and Dark Field; 5x, 20x and 50x objectives | Cleanroom |
Automated Probe station | Wafer scale automated characterization, equipped with computer interface, waveform generator, current amplifier, Tektronix digital oscilloscope, DC source | Characterization-1 |
Modelocked Ti: Sapphire laser | Doubling and tripling capability | Characterization-4 |
Computer controlled optical characterization (1) | Photoluminescence imaging, BF imaging, photoluminescence spectroscopy, time-resolved photoluminescence spectroscopy | Characterization-4 |
Ar ion laser | CW, 100mW power | Characterization-4 |
Nd:YVO4 UV laser | λ=266 nm, pulse width <7ns, 35 kHz, 11 µJ/pulse | Characterization-4 |
Computer controlled optical characterization (2) | Photoluminescence imaging, BF imaging and photoluminescence spectroscopy | Characterization-4 |
He-4/He-3 Cryostat | Variable temperature to 300 mK and magnetic fields up to 10T | Characterization-3 |
Computer controlled transport station (3) | DAC/ADC interface card, phase lock amplifiers (2x), switch box for studying multiple devices, DC source (2x) | Characterization-3 |
He-4 Cryostat | Variable temperature to 1.5K | Characterization-1 |
Computer controlled transport station (4) | DAC/ADC interface card, current amplifier, switch box for studying multiple devices | Characterization-1 |