| INSTRUMENT | REMARKS | LOCATION |
|---|---|---|
| Ge/Si CVD furnace | Precursor gases: SiH4, GeH4, PH3, B2H6 Carrier gases: Ar, H2 | Synthesis-2 |
| Si growth furnace | Precursor gases: SiH4, B2H6 | Synthesis-1 |
| General Purpose CVD/Laser Ablation (2x) | Single source precursors (CVD); single/multi-component targets (LA) | Synthesis-1 |
| Pulsed Nd:YAG | For laser ablation synthesis. 1064, 532 and 353 nm available, 10 Hz | Synthesis-1 |
| MOCVD system | Available precursors: (CH3)3Ga, (CH3)3In, (CH3)3Al, NH3 and n/p-type dopants | Synthesis-1 |
| Drybox | Purified N2 atmosphere | Characterization-1 |
| Oven | Characterization-1 | |
| Annealing Furnace | Annealing in O2 atmosphere up to 800°C for creating oxide-passivated nanostructures | Synthesis-2 |