| INSTRUMENT |
REMARKS |
LOCATION |
| Ge/Si CVD furnace |
Precursor gases: SiH4, GeH4, PH3, B2H6
Carrier gases: Ar, H2 |
Synthesis-2 |
|
| Si growth furnace |
Precursor gases: SiH4, B2H6 |
Synthesis-1 |
|
| General Purpose CVD/Laser Ablation (2x) |
Single source precursors (CVD); single/multi-component targets (LA) |
Synthesis-1 |
|
| Pulsed Nd:YAG |
For laser ablation synthesis. 1064, 532 and 353 nm available, 10 Hz |
Synthesis-1 |
|
| MOCVD system |
Available precursors: (CH3)3Ga, (CH3)3In, (CH3)3Al, NH3 and n/p-type dopants |
Synthesis-1 |
|
| Drybox |
Purified N2 atmosphere |
Characterization-1 |
|
| Oven |
|
Characterization-1 |
|
| Annealing Furnace |
Annealing in O2 atmosphere up to 800°C for creating oxide-passivated nanostructures |
Synthesis-2 |
